汽车级碳化硅功率MOSFET，1200 V、40 mOhm（典型值，40 A），HiP247-4封装
可出货量：80000.0 PCS
产品型号：SCT040W120G3-4AG
Product Details
产品介绍:
描述
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
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所有功能
- AEC-Q101 qualified
- Very low RDS(on) over the entire temperature range
- High speed switching performances
- Very fast and robust intrinsic body diode
- Very high operating junction temperature capability (TJ = 200 °C)
- Source sensing pin for increased efficiency
