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This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.
| Compliance (Only Automotive Supports PPAP) | Automotive |
|---|---|
| AEC Qualified | Yes |
| Polarity | N+P |
| ESD Diodes (Y|N) | Yes |
| |VDS| (V) | 30 V |
| |VGS| (±V) | 20 ±V |
| |IDS| @TA = +25°C (A) | 0.9, 0.6 A |
| PD @TA = +25°C (W) | 0.49 W |
| RDS(ON)Max@ VGS(10V)(mΩ) | 400, 900 mΩ |
| RDS(ON)Max@ VGS(4.5V)(mΩ) | 700, 1700 mΩ |
| |VGS(TH)| Min (V) | 0.8, 1 V |
| |VGS(TH)| Max (V) | 1.6, 2.6 V |
| QG Typ @ |VGS| = 4.5V (nC) | 1.1, 0.36 nC |
| CISS Typ (pF) | 38.4, 19 pF |
| CISS Condition @|VDS| (V) | 15, 15 V |
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